When the DRAIN voltage of the MAX5948B is high with
respect to V
EE
(Figure 12), the internal MOSFET Q3 is
turned off so that I1 and the internal MOSFET Q2 clamp
the PWRGD pin to the DRAIN pin. MOSFET Q2 sinks
the modules pullup current, and the module turns off.
When the DRAIN voltage drops below V
PG
, MOSFET Q3
turns on, shorting I1 to V
EE
and turning Q2 off. The
pullup current in the module pulls PWRGD high,
enabling the module.
GATE Voltage Regulation
GATE goes high when the following startup conditions
are met: UV is high, OV is low, the supply voltage is
above V
UV,LH
, and (V
SENSE
- V
EE
) is less than 50mV.
GATE is pulled up with a 45礎 current source and is
regulated at 13.5V above V
EE
. The MAX5948A/
MAX5948B include an internal clamp that ensures the
GATE voltage of the external MOSFET never exceeds
18V. During a fast-rising V
DD
, the clamp also keeps the
GATE and SENSE potentials as close as possible to
prevent the FET from accidentally turning on. When a
fault condition is detected, GATE is pulled low with a
50mA current.
DRAIN Pin Protection
The MAX5948s DRAIN pin withstands negative volt-
ages (referenced to V
EE
); no external diode is required.
When the -48V backplane shorts to ground and V
EE
becomes 0V, the DRAIN pin is held at less than 1.5V
(sum of Q1s body diode and voltage drop across R1)
below V
EE
due to the storage capacitor C3 (Figure 13).
The -1.5V results in a 50mA reverse DRAIN current,
which is within the capability of the MAX5948. A design
with R1 larger than 0.1& may require a resistor in series
with the DRAIN pin to avoid exceeding the 50mA drain
current maximum.
-48V Hot-Swap Controllers
with External R
SENSE
14   ______________________________________________________________________________________
PWRGD
V
EE
V
PG
-48V
R1
R2
C1
Q1
R3
C2
MAX5948A
V
IN+
V
IN-
C4
V
OUT+
V
OUT-
ON/OFF
ACTIVE-HIGH
ENABLE MODULE
DRAIN
GATE
SENSE
V
EE
V
DD
R4
R5
R6
*
*DIODES INC. SMAT70A.
-48V RTN
-48V RTN
(SHORT PIN)
UV
OV
Q2
Figure 13. Active-Low Enable Module
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